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Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs

Description:
Wereport on the design, fabrication and optical characterization of GaN/AlNquantum-dot-based waveguides for all-optical switching via intraband absorptionsaturation at 1.55 microns. The transmittance of the TM-polarized lightincreases with the incident optical power due to the saturation of the s-p zintraband absorption in the QDs. Single-mode waveguides ... Publication year: 2013 Reference: Monteagudo-Lerma, L.; Valdueza-Felip, S.; Naranjo, F.B.; Corredera, P.; Rapenne, L.; Sarigiannidou, E.; Strasser, G.; Monroy, E.; González-Herráez, M.; “Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs”, Optics Express, vol: 21 ,Páginas: 27578 – 27586 (2013); doi: 10.1364/OE.21.027578 Magazine: Optics Express Running: No.

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