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Characterizing integration time and gray-level-related nonlinearities in a NMOS sensor  
Description:
We report a nonlinearity effect related to the integration time in a double-beam spectroradiometer equipped with two negative-module metal-oxide semiconductor (NMOS) sensors. This effect can be explained by the addition of photoelectrons produced by the radiant flux on the sensors during the read-out phase to the photoelectrons produced during the measurement phase. A new method is proposed to characterize and correct both gray-level and integration-time-related nonlinearities in NMOS sensors. This method is experimentally simple and outperforms other commonly used correction procedures. (C) 2014 Optical Society of America. 

Publication year:    2014
Reference:    Javier Pacheco-Labrador; Alejandro Ferrero; Pilar Martín "Characterizing integration time and gray-level-related nonlinearities in a NMOS sensor" Applied Optics; vol: 53 ; Páginas: 7778 - 7786 (2014)
Magazine:    Applied Optics
Running:    No.
 
Investigación financiada por el Ministerio de Ciencia e Innovación y la Agencia Estatal de Investigación
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